PERFORMANCE ANALYSIS OF A 7nm FinFET DEVICE USING High-k (HK) DIELECTRIC OXIDE MATERIAL WITH k = 24, 25, 30 AND GaAs AS METAL GATE (MG) MATERIAL
The article investigates the benefits of scaling Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and emphasizes FinFETs advantages over planar MOSFETs, notably in terms of decreasing short-channel effects (SCEs) and boosting device performance. High-k (HK) dielectric oxide materials employed include Hafnium Oxide (HfO₂), Lanthanum Oxide (La₂O₃), and Lanthanum Aluminum Oxide (LaAlO₃). These materials have excellent features such as high dielectric constant, better permittivity and increased electron mobility. The key performance measures investigated include saturation drain current (Id(sat)), electric field distribution, electro-static potential, energy densities, threshold voltage (Vth), transconductance (gm), Drain Induced Barrier Lowering (DIBL) and subthreshold swing (SS). The findings show that using HK dielectrics with a GaAs metal gate improves device performance substantially, especially in terms of electric charge densities, electric field distribution, temperature sensitivity, see beck coefficient and overall device stability and efficiency. The study suggests that high-k dielectric materials are more suitable for advanced nanoelectronics applications than SiO₂.
Saturation Drain Current, Electric Field Distribution, Electro-Static Potential, Energy Densities, Threshold Voltage, Transconductance, Drain Induced Barrier Lowering and Subthreshold Swing.